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GA10JT12-263
Part number：
GA10JT12-263
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
TRANS SJT 1200V 25A
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    -
  • Supplier Device Package
    -
  • FET Type
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    120mOhm @ 10A
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    1403 pF @ 800 V
  • Power Dissipation (Max)
    170W (Tc)
  • FET Feature
    -
  • 1968195384
  • 86-13826519287‬
  • +8613826519287

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