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G3R350MT12D
Part number：
G3R350MT12D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
SIC MOSFET N-CH 11A TO247-3
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 8847
minimum : 1
quantity
unit price
price
1
4.74
4.74
10
4.21
42.1
25
4.01
100.25
100
3.73
373
250
3.56
890
500
3.44
1720
1000
3.31
3310
2500
3.16
7900
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    420mOhm @ 4A, 15V
  • Vgs(th) (Max) @ Id
    2.69V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs
    12 nC @ 15 V
  • Vgs (Max)
    ±15V
  • Input Capacitance (Ciss) (Max) @ Vds
    334 pF @ 800 V
  • Power Dissipation (Max)
    74W (Tc)
  • FET Feature
    -
  • 1968195384
  • 86-13826519287‬
  • +8613826519287

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