collect compare
G3R160MT17J
Part number：
G3R160MT17J
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
SIC MOSFET N-CH 18A TO263-7
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 1000
quantity
unit price
price
1000
9.65
9650
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    224mOhm @ 10A, 15V
  • Vgs(th) (Max) @ Id
    2.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    29 nC @ 15 V
  • Vgs (Max)
    ±15V
  • Input Capacitance (Ciss) (Max) @ Vds
    854 pF @ 1000 V
  • Power Dissipation (Max)
    187W (Tc)
  • FET Feature
    -
  • 1968195384
  • 86-13826519287‬
  • +8613826519287

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