CGD65A055SH2
Part Number:
CGD65A055SH2
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Cambridge GaN Devices
Description:
650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) -
- Drain to Source Voltage (Vdss) 650 V
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 27A
- Vgs (Max) +20V, -1V
- Supplier Device Package 16-DFN (8x8)
- Package / Case 16-PowerVDFN
- Rds On (Max) @ Id, Vgs 77mOhm @ 2.2A, 12V
- Vgs(th) (Max) @ Id 4.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs 4 nC @ 12 V