TPH3208LS
Part Number:
TPH3208LS
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Transphorm
Description:
GANFET N-CH 650V 20A 3PQFN
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 96W (Tc)
- Vgs (Max) ±18V
- Technology GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
- Rds On (Max) @ Id, Vgs 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 8 V
- Supplier Device Package 3-PQFN (8x8)
- Package / Case 3-PowerDFN