VS-4C10ET07S2L-M3
Part Number:
VS-4C10ET07S2L-M3
Product Classification:
Types of Rectifier Diodes
Manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
RECTIFIER, SILICON CARBIDE, 650V
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Grade -
- Qualification -
- Operating Temperature - Junction -55°C ~ 175°C
- Current - Average Rectified (Io) 10A
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package TO-263AB (D2PAK)
- Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
- Technology SiC (Silicon Carbide) Schottky
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Voltage - DC Reverse (Vr) (Max) 650 V
- Current - Reverse Leakage @ Vr 80 µA @ 650 V
- Capacitance @ Vr, F 440pF @ 1V, 1MHz