TW083U65C,RQ
Part Number:
TW083U65C,RQ
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
N-CH SIC MOSFET, 650 V, 0.083 (T
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 111W (Tc)
- Operating Temperature 175°C
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Package / Case 8-PowerSFN
- Supplier Device Package TOLL
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
- Vgs(th) (Max) @ Id 5V @ 600µA
- Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V
- Rds On (Max) @ Id, Vgs 124mOhm @ 15A, 18V