TPM7R10CQ5,LQ
Part Number:
TPM7R10CQ5,LQ
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
N-CH MOSFET, 150 V, 0.0071 @10V,
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
- Package / Case 8-PowerTDFN
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 4.5V @ 1.2mA
- Power Dissipation (Max) 3W (Ta), 250W (Tc)
- Current - Continuous Drain (Id) @ 25°C 13A (Ta), 120A (Tc)
- Rds On (Max) @ Id, Vgs 7.1mOhm @ 35A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 75 V
- Supplier Device Package 8-SOP Advance (4.9x5.75)