SISS26LDN-T1-UE3

SISS26LDN-T1-UE3

Part Number: SISS26LDN-T1-UE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 60 V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
  • Rds On (Max) @ Id, Vgs 4.3mOhm @ 15A, 10V
  • Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
  • Supplier Device Package PowerPAK® 1212-8S
  • Package / Case PowerPAK® 1212-8S
  • Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 81.2A (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 30 V