SI4666DY-T1-GE3

SI4666DY-T1-GE3

Part Number: SI4666DY-T1-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8SO
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Obsolete
  • Mounting Type Surface Mount
  • Package / Case 8-SOIC (0.154", 3.90mm Width)
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Supplier Device Package 8-SOIC
  • Vgs(th) (Max) @ Id 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
  • Vgs (Max) ±12V
  • Drain to Source Voltage (Vdss) 25 V
  • Current - Continuous Drain (Id) @ 25°C 16.5A (Tc)
  • Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 10 V