S3M0016120K
Part Number:
S3M0016120K
Product Classification:
Single FETs, MOSFETs
Manufacturer:
SMC Diode Solutions
Description:
MOSFETS SILICON CARBIDES 1200V 1
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Vgs(th) (Max) @ Id 4V @ 30mA
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-247-4
- Rds On (Max) @ Id, Vgs 23mOhm @ 75A, 18V
- Vgs (Max) +18V, -4V
- Gate Charge (Qg) (Max) @ Vgs 287 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 5251 pF @ 1000 V
- Power Dissipation (Max) 732W (Tc)