S2M0025120F
Part Number:
S2M0025120F
Product Classification:
Single FETs, MOSFETs
Manufacturer:
SMC Diode Solutions
Description:
MOSFETS SILICON CARBIDES 1200V 2
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 190W (Tc)
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
- Supplier Device Package TO-247-4
- Vgs(th) (Max) @ Id 4V @ 15mA
- Vgs (Max) +20V, -5V
- Gate Charge (Qg) (Max) @ Vgs 165 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 4054 pF @ 1000 V