S2M0016120K
Part Number:
S2M0016120K
Product Classification:
Single FETs, MOSFETs
Manufacturer:
SMC Diode Solutions
Description:
DIODE MOSFETS SILICON CARBIDES 1
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 140A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Power Dissipation (Max) 714W (Tc)
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Vgs (Max) +20V, -5V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs(th) (Max) @ Id 3.6V @ 23mA
- Rds On (Max) @ Id, Vgs 22.3mOhm @ 75A, 20V
- Gate Charge (Qg) (Max) @ Vgs 224 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 6680 pF @ 1000 V