S1M1000170D

S1M1000170D

Part Number: S1M1000170D
Product Classification: Single FETs, MOSFETs
Manufacturer: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1700V
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
  • Package / Case TO-247-3
  • Supplier Device Package TO-247AD
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Power Dissipation (Max) 81W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 500µA
  • Drain to Source Voltage (Vdss) 1700 V
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Vgs (Max) +25V, -10V
  • Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 10 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 1000 V