RM12N650T2
Part Number:
RM12N650T2
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Rectron USA
Description:
MOSFET N-CH 650V 11.5A TO220-3
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 50 V
- Power Dissipation (Max) 101W (Tc)
- Rds On (Max) @ Id, Vgs 360mOhm @ 7A, 10V