P3M12160K3
Part Number:
P3M12160K3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
PN Junction Semiconductor
Description:
SICFET N-CH 1200V 19A TO-247-3
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 110W
- Current - Continuous Drain (Id) @ 25°C 19A
- Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V
- Supplier Device Package TO-247-3L
- Vgs (Max) +21V, -8V
- Vgs(th) (Max) @ Id 2.4V @ 2.5mA (Typ)