NH3T008MP120F2
Part Number:
NH3T008MP120F2
Product Classification:
FET, MOSFET Arrays
Manufacturer:
NoMIS Power
Description:
1200 V, 8 m SiC Half-Bridge Powe
Packaging:
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case Module
- Current - Continuous Drain (Id) @ 25°C 200A (Tc)
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Vgs(th) (Max) @ Id 4V @ 100mA
- Gate Charge (Qg) (Max) @ Vgs 530nC @ 20V