N3T080MP120D
Part Number:
N3T080MP120D
Product Classification:
Single FETs, MOSFETs
Manufacturer:
NoMIS Power
Description:
1200 V, 80 m SiC MOSFET, TO-247-
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 188W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Current - Continuous Drain (Id) @ 25°C 38A
- Technology SiCFET (Silicon Carbide)
- Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
- Vgs (Max) +20V, -5V
- Supplier Device Package TO-247-3L
- Vgs(th) (Max) @ Id 3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 53 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 896 pF @ 800 V