MXP120A045FE-T1GE3

MXP120A045FE-T1GE3

Part Number: MXP120A045FE-T1GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: SIC MOSFET
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Supplier Device Package -
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type -
  • Package / Case -
  • Current - Continuous Drain (Id) @ 25°C 49A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Power Dissipation (Max) 212W (Tc)
  • Vgs (Max) +22V, -10V
  • Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
  • Rds On (Max) @ Id, Vgs 56mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id 2.38V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs 75.6 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1958 pF @ 800 V