IXSJ80N120R1
Part Number:
IXSJ80N120R1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IXYS
Description:
1200V 18M (30A @ 25C) SIC MOSFET
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 85A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +21V, -4V
- Vgs(th) (Max) @ Id 4.8V @ 22.2mA
- Gate Charge (Qg) (Max) @ Vgs 154 nC @ 18 V
- Supplier Device Package ISO247-3L
- Rds On (Max) @ Id, Vgs 22.5mOhm @ 40A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 4522 pF @ 800 V
- Power Dissipation (Max) 266W