IXSJ43N120R1
Part Number:
IXSJ43N120R1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IXYS
Description:
1200V 36M (43A @ 25C) SIC MOSFET
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 45A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 142W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs(th) (Max) @ Id 4.8V @ 11.1mA
- Gate Charge (Qg) (Max) @ Vgs 79 nC @ 18 V
- Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 18V
- Vgs (Max) +12V, -4V
- Input Capacitance (Ciss) (Max) @ Vds 2453 pF @ 800 V
- Supplier Device Package ISO247-3L