IXSJ25N120R1

IXSJ25N120R1

Part Number: IXSJ25N120R1
Product Classification: Single FETs, MOSFETs
Manufacturer: IXYS
Description: 1200V 62M (25A @ 25C) SIC MOSFET
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Package / Case TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 28A (Tc)
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 1200 V
  • Technology SiCFET (Silicon Carbide)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +21V, -4V
  • Rds On (Max) @ Id, Vgs 81mOhm @ 12A, 18V
  • Supplier Device Package ISO247-3L
  • Vgs(th) (Max) @ Id 4.8V @ 5.3mA
  • Gate Charge (Qg) (Max) @ Vgs 52 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1435 pF @ 800 V
  • Power Dissipation (Max) 75.3W (Tc)