IV2Q171R0D7Z
Part Number:
IV2Q171R0D7Z
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Inventchip
Description:
GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging:
Strip
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Supplier Device Package TO-263-7
- Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
- Power Dissipation (Max) 73W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +20V, -5V
- Package / Case TO-263-7
- Rds On (Max) @ Id, Vgs 910mOhm @ 1A, 18V
- Vgs(th) (Max) @ Id 4.5V @ 380uA
- Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 1000 V