IV2Q06025D7Z

IV2Q06025D7Z

Part Number: IV2Q06025D7Z
Product Classification: Single FETs, MOSFETs
Manufacturer: Inventchip
Description: GEN 2, SIC MOSFET, 650V 25MOHM,
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Drain to Source Voltage (Vdss) 650 V
  • Supplier Device Package TO-263-7
  • Power Dissipation (Max) 600W (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +20V, -5V
  • Current - Continuous Drain (Id) @ 25°C 111A (Tc)
  • Rds On (Max) @ Id, Vgs 33mOhm @ 40A, 18V
  • Vgs(th) (Max) @ Id 4.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs 125 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 600 V
  • Package / Case TO-263-7