IV1Q12160T3
Part Number:
IV1Q12160T3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Inventchip
Description:
SIC MOSFET, 1200V 160MOHM, TO247
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Vgs(th) (Max) @ Id 5V @ 1.9mA
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Power Dissipation (Max) 134W (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +20V, -5V
- Rds On (Max) @ Id, Vgs 195mOhm @ 10A, 20V
- Gate Charge (Qg) (Max) @ Vgs 43 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 895 pF @ 800 V