IPB175N20NM6ATMA1
Part Number:
IPB175N20NM6ATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IPB175N20NM6ATMA1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
- Vgs(th) (Max) @ Id 4.5V @ 105µA
- Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 100 V
- Supplier Device Package PG-TO263-3-U01
- Current - Continuous Drain (Id) @ 25°C 9.7A (Ta), 61A (Tc)
- Rds On (Max) @ Id, Vgs 15.5mOhm @ 38A, 15V
- Power Dissipation (Max) 3.8W (Ta), 203W (Tc)