GT130N20M
Part Number:
GT130N20M
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH 200V 90A 250W TO-263
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Supplier Device Package TO-263
- Power Dissipation (Max) 250W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
- Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5860 pF @ 100 V