GC210N80FE
Part Number:
GC210N80FE
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH 800V ESD 17A 51W TO-
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Vgs (Max) ±30V
- Supplier Device Package 8-DFN (5x6)
- Power Dissipation (Max) 51W (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 250µA
- Package / Case 8-PowerSMD, Flat Leads
- Rds On (Max) @ Id, Vgs 210mOhm @ 8.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 380 V