GC085N65QF
Part Number:
GC085N65QF
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH 650V 40A 299W TO-247
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Supplier Device Package 8-SOP
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Vgs(th) (Max) @ Id 4.6V @ 250µA
- Rds On (Max) @ Id, Vgs 85mOhm @ 21.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 400 V
- Power Dissipation (Max) 299W (Tc)