G3F34MT12K
Part Number:
G3F34MT12K
Product Classification:
Single FETs, MOSFETs
Manufacturer:
GeneSiC Semiconductor
Description:
1200V 34M TO-247-4 G3F SIC MOSFE
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 63A (Tc)
- Power Dissipation (Max) 263W (Tc)
- Package / Case TO-247-4
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-247-4
- Gate Charge (Qg) (Max) @ Vgs 104 nC @ 18 V
- Vgs (Max) +22V, -10V
- Rds On (Max) @ Id, Vgs 45mOhm @ 26A, 18V
- Vgs(th) (Max) @ Id 4.3V @ 18mA
- Input Capacitance (Ciss) (Max) @ Vds 2418 pF @ 800 V