G1K1P10TE
Part Number:
G1K1P10TE
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET P-CH 100V 24A 88W TO-220
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Power Dissipation (Max) 88W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
- Supplier Device Package TO-252
- Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 50 V