G120P06T
Part Number:
G120P06T
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET P-CH 60V -120A 277W TO-22
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOP
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Power Dissipation (Max) 277W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
- Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 12674 pF @ 30 V