FS17MR12W2M1HB11ABPSA2
Part Number:
FS17MR12W2M1HB11ABPSA2
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Infineon Technologies
Description:
FS17MR12W2M1HB11ABPSA2
Packaging:
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- FET Feature -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Power - Max -
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 40A (Tj)
- Rds On (Max) @ Id, Vgs 16.2mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id 5.15V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs 149nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 800V
- Configuration 6 N-Channel (Three Phase Inverter)