EPC2367ENGRT
Part Number:
EPC2367ENGRT
Product Classification:
Single FETs, MOSFETs
Manufacturer:
EPC
Description:
TRANS GAN 100V .0012OHM 5QFN
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Grade -
- Qualification -
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
- Mounting Type Surface Mount, Wettable Flank
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Vgs(th) (Max) @ Id 2.5V @ 10mA
- Current - Continuous Drain (Id) @ 25°C 78A (Tj)
- Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 5V
- Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 50 V
- Supplier Device Package 5-QFN (3.3x3.3)
- Package / Case 5-PowerWQFN