CGD65A130SH2

CGD65A130SH2

Part Number: CGD65A130SH2
Product Classification: Single FETs, MOSFETs
Manufacturer: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Power Dissipation (Max) -
  • Drain to Source Voltage (Vdss) 650 V
  • Drive Voltage (Max Rds On, Min Rds On) 12V
  • Technology GaNFET (Gallium Nitride)
  • Current - Continuous Drain (Id) @ 25°C 12A
  • Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
  • Vgs(th) (Max) @ Id 4.2V @ 4.2mA
  • Vgs (Max) +20V, -1V
  • Supplier Device Package 16-DFN (8x8)
  • Package / Case 16-PowerVDFN
  • Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 12 V